DMA 30IM1600PZ
相关结果约9519条Littelfuse(力特)IXYS功率半导体选型指南
Introduction of Littelfuse Index Symbols and Terms/Nomenclature New Pressfit Pin packages ISOPLUS™ family IGBT Discretes IGBT Modules Power MOSFETs Diodes Thyristors Rectifier Bridges Protection Devices Gate Drivers/Power Relays Diode & Thyristor(IXYS Chippenham) Power Semiconductor Chips/Direct Copper Bonded Ceramic Substrates Application Notes Highlights Outline Drawings
LITTELFUSE - 不对称和脉冲晶闸管,中压晶闸管,二极管,二极管模块,交流控制器,保护装置,冷却器,分布式门极晶闸管,制动整流器总成,功率半导体组件,功率半导体附件,功率因数校正模块,功率继电器,功率金氧半电晶体,升压模块,半快二极管,半桥模块,单二极管模块,单晶闸管模块,双二极管模块,双向可控硅,双晶闸管,双极场效应晶体管,双超快二极管,外围组件,大功率声波频率分布,带制动装置的整流桥,快体二极管,快恢复二极管,快恢复二极管二极管,快速二极管整流桥,快速关断晶闸管,快速恢复二极管,快速恢复外延二极管,散热器,整流二极管,整流二极管模块,整流器,整流桥,整流管,晶闸管,晶闸管模块,标准底座夹具套件,棒夹,水冷二极管,相控晶闸管,离散相控晶闸管,箱形夹具,绝缘栅双极晶体管,肖特基,超快恢复二极管,软恢复二极管,配件,门驱动器,雪崩二极管,高频场效应晶体管,34/62MM外壳中的半桥模块,6件装模块,HIPERFRED&NBSP™ 二极管,HIPERFRED2型™ 二极管,HIPERFRED™ 模块,IGBT模块,MOSFETS器件,MOSFET模块,P沟道MOSFET,Q3级HIPERFET,SIC肖特基二极管,传统MOSFET,全桥和制动/降压/增压模块,压装式IGBT,压装式IGBT门极驱动单元,声波-FRD™ 二极管,导通二极管(BOD),快速导通二极管(BOD),沟道MOSFETS,点火IGBTS,相位支路/CBI模块,线性L2™ 功率金氧半电晶体,耗尽模式MOSFET,肖特基GEN2二极管,超结功率MOSFET,1-FORM-A RELAYS,1-FORM-B RELAYS,6-PACK MODULES,AC CONTROLLER,AC REGULATORS,ACCESSORIES,ASYMMETRIC AND PULSE THYRISTORS,ASYMMETRIC THYRISTORS,AVALANCHE DIODES,BAR CLAMPS,BIMOSFETS,BOOST CHOPPER IGBT MODULES,BOOST MODULES,BOX CLAMPS,BRAKE IGBT MODULES,BRAKE/BUCK/BOOST CHOPPER IGBT MODULES,BRAKING RECTIFIER ASSEMBLIES,BREAK-OVER DIODES,BREAK-OVER DIODES (BOD),BUCK IGBT MODULES,CBI 2 IGBT MODULES,CBI 3 IGBT MODULES,COOLERS,DEPLETION-MODE MOSFETS,DIODE MODULES,DIODES,DIRECT COPPER BONDED CERAMIC SUBSTRATES,DISCRETES PHASE CONTROL THYRISTORS,DISTRIBUTED GATE THYRISTORS,DUAL DIODE MODULES,DUAL SPEED DIGITAL OPTICAL ISOLATOR,DUAL THYRISTOR,DUAL THYRISTOR MODULES,DUAL ULTRAFAST DIODES,EXTRA FAST RECOVERY DIODES,FAST BODY DIODE,FAST BREAK-OVER DIODES,FAST BREAK-OVER DIODES (BOD),FAST PHASE CONTROL THYRISTORS,FAST RECOVERY DIODE,FAST RECOVERY DIODES,FAST TURN OFF THYRISTORS,FAST TURN-OFF THYRISTORS,FAULT PROTECTED RELAYS,FRED,FRED DIODES,FULL BRIDGE AND BRAKE / BUCK / BOOST MODULES,FULL BRIDGE IGBT MODULES,FUSES,GATE DRIVERS,GATE TURN OFF THYRISTORS,GTOS,HALF BRIDGE MODULES,HALF BRIDGE MODULES IN 34/62MM HOUSINGS,HALF CONTROLLED RECTIFIER BRIDGES,HEATSINKS,HIGH POWER SONIC FRD,HIGH SPEED DIGITAL OPTICAL ISOLATORS,HIGH VOLTAGE NPT IGBTS,HIGH VOLTAGE RECTIFIER MODULES,HIPERDYN™ FREDS,HIPERDYN™FREDS,HIPERFETS,HIPERFETS (FBD),HIPERFET(FBD),HIPERFRED2™ DIODES,HIPERFRED™ DIODES,HIPERFRED™ MODULES,IGBT,IGBT GATE DRIVER,IGBT HALF BRIDGE MODULES,IGBT MODULES,IGBTS,IGNITION IGBTS,INSULATED GATE BI-POLAR TRANSISTORS,LEGACY MOSFETS,LEGACY POWER MOSFETS,LINEAR L2™ POWER MOSFETS,LINEAR OPTOCOUPLERS,LOW ON-STATE VOLTAGE NPT IGBTS,LOW-SIDE GATE DRIVERS,MEDIUM VOLTAGE THYRISTORS,MISCELLANEOUS RELAYS,MODULES,MOS-GATED THYRISTORS,MOSFET MODULES,MOSFETS,N-CHANNEL DEPLETION MODE FETS,NPT IGBT,OPTICALLY ISOLATED AC POWER SWITCHES,OPTICALLY ISOLATED I2C BUS REPEATERS,OPTICALLY ISOLATED LOAD-BIASED GATE DRIVERS,OPTICALLY ISOLATED PHOTOVOLTAIC GATE DRIVERS,P-CHANNEL MOSFETS,PERIPHERAL COMPONENTS,PHASE CONTROL THYRISTORS,PHASE LEG / CBI MODULES,PHASE LEG IGBT MODULE,PLANAR IGBTS,POLAR™ MOSFETS,POLAR™MOSFET,POWER FACTOR CORRECTION MODULES,POWER MOSFETS,POWER RELAYS,POWER SEMICONDUCTOR,POWER SEMICONDUCTOR ACCESSORIES,POWER SEMICONDUCTOR ASSEMBLIES,POWER SEMICONDUCTOR CHIPS,PRESS-PACK IGBT,PRESS-PACK IGBT GATE DRIVE UNITS,PROTECTION DEVICES,PT IGBTS,PULSE THYRISTORS,Q3-CLASS HIPERFET,RECTIFIER,RECTIFIER BRIDGES,RECTIFIER BRIDGES WITH BRAKE UNIT,RECTIFIER BRIDGES WITH FAST DIODES,RECTIFIER DIODE,RECTIFIER DIODE MODULES,RECTIFIER DIODES,RECTIFIERS,RESETTABLE PTCS,REVERSE CONDUCTING IGBTS,SCHOTTKY DIODES,SCHOTTKY GEN2 DIODES,SEMIFAST DIODES,SEMIFAST DIODES,SIC DIODES,SIC GATE DRIVER,SIC MOSFET,SIC MOSFETS,SIC SCHOTTKY DIODES,SILICON CARBIDE SCHOTTKY DIODES,SILICONCARBIDE POWER MOSFETS,SINGLE DIODE MODULES,SINGLE PHASE DIODE BRIDGES,SINGLE PHASE FULLY CONTROLLED BRIDGES,SINGLE THYRISTOR MODULES,SINGLE-CHANEL EACH DIRECTION DIGITAL OPTICAL ISOLATOR,SIX PHASE DIODE,SIX PHASE THYRISTOR,SIX-PACK IGBT MODULES,SIX-PACK TRENCH MOSFET,SOFT RECOVERY DIODE,SOFT RECOVERY DIODES,SOLID STATE RELAYS,SONIC-FRD™ DIODES,STANDARD BAR CLAMPS,STANDARD BASE CLAMP KITS,STANDARD MOSFETS,SUPERJUNCTION POWER MOSFET,SUPERJUNCTION POWER MOSFETS,THREE PHASE DIODE BRIDGE,THREE PHASE FULLY CONTROLLED BRIDGES,THYRISTOR,THYRISTOR MODULES,THYRISTORS,TRENCH IGBTS,TRENCH MOSFETS,TRENCH POWER MOSFETS,TRIAC,TRIACS,TRIODE-REVERSE CONDUCTING THYRISTOR,TVS DIODES,ULTRA JUNCTION POWER MOSFETS,VERY HIGH VOLTAGE NPT IGBTS,VERY HIGH VOLTAGE POWER MOSFETS,WATER COOLED DIODE,WATER COOLED DIODE MODULES,WATER COOLED DUAL DIODE MODULES,WATER COOLED DUAL THYRISTOR MODULES,WATER COOLED THYRISTOR MODULES,R1280NC25M,MCD 26-16IO1B,N2055HE420,IXTT 30N50L2,R1280NC25K,R1280NC25L,MCD 56-18IO8B,IXBOD 2-52R,R1280NC25J,IXTQ 52N30P,MCK 200-18IO1,IXYR 100N120C3,L,公用事业规模转换器,可再生发电,大中型驱动器,CONSUMER ELECTRONICS,DATA ACQUISITION,DATA COMMUNICATIONS,ELECTRONIC SWITCHING,INDUSTRIAL CONTROLS,INDUSTRIAL FACILITIES,INSTRUMENTATION,LARGE AND MEDIUM DRIVES,MEDICAL EQUIPMENT,MULTIPLEXERS,RENEWABLE GENERATION,SECURITY,TELECOMMUNICATIONS,UTILITIES SCALE CONVERTERS,VEHICLES
电力半导体2020-2021产品目录
LITTELFUSE - 中压晶闸管,二极管,二极管模块,交流控制器,保护装置,冷却器,分布式门极晶闸管,制动整流器,功率半导体组件,功率因数校正模块,功率继电器,功率金氧半电晶体,半快二极管,单二极管模块,单晶闸管模块,双二极管模块,双向可控硅,双头螺栓,双晶闸管,双超快二极管,快体二极管,快恢复二极管二极管,快断二极管,快速关断晶闸管,快速恢复二极管,散热器,整流二极管模块,整流器,整流桥,断开二极管,晶闸管,晶闸管模块,标准底座夹具套件,棒夹,水冷二极管,电源半导体,相控晶闸管,离散相控晶闸管,箱形夹具,绝缘栅双极晶体管,肖特基,肖特基二极管,胶囊装置,脉冲晶闸管,董事会,螺柱装置,超快恢复二极管,软恢复二极管,门驱动器,雪崩二极管,高压整流管,高频场效应晶体管,DCB陶瓷基板,IGBT模块,IGBT离散,MOSFETS器件,MOSFET模块,P沟道MOSFET,SIC肖特基二极管,WESTACK-模块化,WESTACKLITE-模块化,传统MOSFET 64,压装IGBT膜盒器件,压装式IGBT门极驱动单元,沟道MOSFETS,点火IGBTS,线性L2™ 功率金氧半电晶体,耗尽模式MOSFET,艾克西斯·贝弗利,超结功率MOSFET,高功率声波FRD的,AC CONTROLLER,AVALANCHE DIODES,BAR CLAMPS,BOD,BOX CLAMPS,BRAKING RECTIFIER,BREAK-OVER DIODES,CAPSULE DEVICES,COOLERS,DCB CERAMIC SUB-STRATES,DEPLETION-MODE MOSFETS,DIODE MODULES,DIODES,DISCRETES PHASE CONTROL THYRISTORS,DISTRIBUTED GATE THYRISTORS,DUAL DIODE MODULES,DUAL THYRISTOR,DUAL ULTRAFAST DIODES,EXTRA FAST RECOVERY DIODES,FAST BODY DIODE,FAST BREAK-OVER DIODES,FAST RECOVERY DIODES,FAST TURN-OFF THYRISTORS,FRED DIODES,FREDS DIODES,GATE DRIVERS,GTOS,HEATSINKS,HIGH POWER SONIC FRD'S,HIGH VOLTAGE RECTIFIERS,HIPERFETS,IGBT DISCRETES,IGBT MODULES,IGNITION IGBTS,INSULATED GATE BI-POLAR TRANSISTORS,IXYS BEVERLY,LEGACY MOSFETS64,LINEAR L2™ POWER MOSFETS,MEDIUM VOLTAGE THYRISTORS,MOSFET MODULES,MOSFETS,P-CHANNEL MOSFETS,PHASE CONTROL THYRISTORS,POWER FACTOR CORRECTION MODULES,POWER MOSFETS,POWER RELAYS,POWER SEMICONDUCTOR,POWER SEMICONDUCTOR ASSEMBLIES,PRESS-PACK IGBT CAPSULE DEVICES,PRESS-PACK IGBT GATE DRIVE UNITS,PROTECTION DEVICES,PULSE THYRISTORS,RECTIFIER,RECTIFIER BRIDGES,RECTIFIER DIODE MODULE,RECTIFIER DIODES,SCHOTTKY DIODES,SCHOTTKY GEN DIODES,SEMIFAST DIODES,SIC MOSFET,SIC MOSFETS,SIC SCHOTTKY DIODESSIC SCHOTTKY DIODES,SINGLE DIODE MODULES,SINGLE THYRISTOR MODULES,SOFT RECOVERY DIODES,STANDARD BASE CLAMP KITS,STUD DEVICES,STUDS,SUPERJUNCTION POWER MOSFETS,THYRISTOR,THYRISTOR MODULES,THYRISTORS,TRENCH MOSFETS,TRIAC,ULTRA JUNCTION POWER MOSFETS,WATER COOLED DIODE,WESTACK - MODULAR,WESTACKLITE - MODULAR,R1280NC25M,MCD 26-16IO1B,N2055HE420,IXTT 30N50L2,R1280NC25K,R1280NC25L,MCD 56-18IO8B,IXBOD 2-52R,R1280NC25J,IXTQ 52N30P,MCK 200-18IO1,IXYR 100N120C3,L,工业设施,消费电子,车辆,CONSUMER ELECTRONICS,INDUSTRIAL FACILITIES,VEHICLES
广告 发布时间 : 2025-03-03
【经验】雅特力AT32 MCU如何灵活使用DMA弹性映射请求?
在使用雅特力部分系列MCU时,可以使用DMA弹性映射功能。此功能使得DMA的通道配置更加灵活,可以将某外设的DMA请求通道指定到DMA1或者DMA2共14个通道中的任意一个通道。本文将介绍如何使用DMA弹性映射请求,从而使得DMA传输变得更加灵活多变。
MCU微课堂|CKS32F107xx DMA简介
直接存储器存取(DMA)用来提供在外设和存储器之间或者存储器和存储器之间的高速数据传输。无须CPU干预,数据可以通过DMA快速地移动,这就节省了CPU的资源来做其他操作。两个DMA控制器有12个通道(DMA1有7个通道,DMA2有5个通道),每个通道专门用来管理来自于一个或多个外设对存储器访问的请求。还有一个仲裁器来协调各个DMA请求的优先权。
DMA在如何在实时控制中提高系统的稳定性和实时性?
先楫产品中有大量支持DMA的设备,其中USB、Ethernet、ADC、DAC等有自己的内部DMA,AHB和AXI总线上还有公共的DMA设备。HDMA、XDMA都是多通道DMA,可以通过DMAMUX实现多通道的数据传输。HDMA、XDMA分别接入AHB和AXI总线,在总线内部传输效率更高。本文将通过两个应用案例,说明DMA在如何在实时控制中提高系统的稳定性和实时性。
【经验】 EFM32系列DMA控制器之LDMA与μDMA的区别比较
在EFM32系列的MCU中DMA对提升系统性能有很大的作用,DMA可在CPU不干预的条件下进行数据传输,数据可在CPU地址空间中的任意可读源地址和可写目的地址之间传输。
DMA总共有几个通道
CS32F03X有5个DMA通道。每个通道连接到特定的外设单元,包括SPIx、I2Sx、I2Cx、USARTx 和TIMx,来管理读写存储器的请求。内部的仲裁器生来处理DMA请求的优先级。
恒烁(Zbitsemi)32位MCU选型表
恒烁半导体提供以下参数的MCU:主频:24Mhz~64Mhz;Flash:64K;SRAM:4K~16K;DMA:16ch;I/O:16~39;Ad Timer:1、3;GTimer:1、4;BTimer:2;LP Timer:1;AWK Timer:1;PCA:1;RTC:1;I+W WDG :2;UART:2~4;USART:2;LP UART :1;IIC :1、2;IIS:1;SPI:1、2;QSPI:1;One WIRE :1;12bit ADC :7+1、11+5、12+5、17+7、11+7、10+7;LVD:1;VC:1、2;OPA:1+1、2;DAC:1、2;CRC:1
产品型号
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品类
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主频(Mhz)
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Flash(KB)
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SRAM(KB)
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I/O
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AdTimer
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G Timer
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B Timer
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LP Timer
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AWK Timer
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PCA
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RTC
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I+WWDG
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UART
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LP UART
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IIC
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SPI
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One WIRE
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12bit ADC
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LVD
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VC
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CRC
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CX32L003F8Q6
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32位MCU
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24Mhz
|
64K
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4K
|
16
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1
|
1
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2
|
1
|
1
|
1
|
1
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2
|
2
|
1
|
1
|
1
|
1
|
7+1
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1
|
1
|
1
|
Z20K14xM DMA搬运数据的注意事项。
由于DMA有通道在搬运数据时,其余处于idle状态的通道无法配置相关的寄存器,在配置DMA通道相关的寄存器(DMA_SADDRn至DMA_CSn)时需要回读判断写操作是否成功,如果写寄存器操作不成功应该继续写寄存器。
CW32L052 DMA直接内存访问
本文介绍CW32L052 DMA直接内存访问功能。CW32L052支持DMA(Direct Memory Access),即直接内存访问,无需CPU干预,实现高速数据传输。
该系列芯片的 AHB MASTER 控制寄存器的 MPRIL 是选择 DMA 优先还是 CPU 优先?
当该系列芯片的 CPU 和 DMA 控制器同时要求使用存储器总线时,DMA 请求优先级更高。为保证 I/O 传输数据不会丢失,建议选择 DMA 优先。
麻烦帮忙看看APM32F103XC_TMR 关闭DMA进入睡眠模式出现故障是为什么?
DMA关执行汇编时到DMA硬件真正被关闭是有时间差的,该时间差内ADC还是传输到DMA,有极小概率出现满中断,而DMA时钟确在此时关闭了,导致无法清中断标志位。调整代码步骤如下:关闭ADC关闭ADC对应的DMA通道关闭DMA进入睡眠模式。
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